Publications

Publications

This page shows a list of selected journal publications in the Kim Group. Conference abstracts/proceedings are not included. For the full list, please visit our Google Scholar page.

2025

R. Roy, A. M. Mahmudul Hasan, Z. Becerra, K.A. Treaster, A. Chakraborty, G. Baucom, H. Kim, A. Angerhofer, and A.M. Evans, Hopping-Type Charge Transport in Controllably p-Doped PolaronicTwo-Dimensional Polymers, Angewandte Chemie e202500767 (2025) 

S. Mondal, M.M.H. Tanim, G. Baucom, S.S. Dabas, J. Gao, J. Liu, Z. Ye, V. Gaddam, A. Ross, L.Q. Chen, H. Kim, R. Tabrizian, and Z. Mi, Unprecedented enhancement of piezoelectricity of wurtzite nitride semiconductors via thermal annealing, Nature Communications 16, 4130 (2025) 

V. Gaddam, S.S. Dabas, J. Gao, D.J. Spry, G. Baucom, N.G. Rudawski, T. Yin, E. Angerhofer, P.G. Neudeck, H.Kim, P. X‐L Feng, M. Sheplak, andR. Tabrizian, Aluminum Scandium Nitride as a Functional Material at 1000° C, Advanced Electronic Materials 11, 2400849 (2025) 

E Hershkovitz, T Yoo, F. da Cruz Gallo, G. Baucom, M.V. Manuel, and H.Kim, Anisotropic Suppression of Martensitic Transformation in Precipitation-Hardened NiTiHf High-Temperature Shape Memory Alloys, JOM 77, 2852 (2025) 

E. Hershkovitz, T. You, X. Pu, K. Bawane, T. Nakayama, H. Suematsu, L. He, and H. Kim, Unveiling and mapping polymorphs in fluorite Y2TiO5 using 4D‐STEM and unsupervised machine learning, Journal of the American Ceramic Society 108, e20309 (2025) 

S. Dabas, S. Mishra, B. Jabbari, D. Mo, R. Kundu, E. Ezike, S. Mondal, G. Baucom, H. Kim, Z. Mi, B. Chatterjee, and R. Tabrizian, A temperature-insensitive nonlinear silicon bulk acoustic oscillator, Applied Physics Letters 126, 133503 (2025)

J., Y. Liu, T. Yoo, M. Itoi, H.Kim, S.R. Phillpot, and D.R. Talham, Solvent Medium-Induced Changes to Internal Pressure in the Layered Host VOPO4·2H2O and the Influence on Intercalation Reactions, Journal of the American Chemical Society 147, 11841 (2025) 

C.K. Edirisinghe, A. Rathore, T. Lee, D.N Lee, A.H. Chen, G. Baucom, E. Hershkovitz, A. Wijesinghe, P. Adhikari, S. Yeom, H.S. Lee, H.K. Choi, H. Kim, M. Yoon, H. Kim, M. Brahlek, H. Rho, and J.S. Lee, Controlling structural phases of Sn through lattice engineering, Physical Review Materials 9, 024202 (2025) 

F. da Cruz Gallo, Y. Yang, Eitan Hershkovitz, M. Kapoor, H.B. Henderson, M.S. Kesler, H. Kim, and M.V. Manule, Hardenability and microstructural evolution of a precipitation strengthened Ni50Ti21Hf25Al4 alloy, Journal of Alloys and Compounds 1010, 178088 (2025) 

2024

T. Yoo, E. Hershkovitz, Y. Yang, F. Gallo, M. V. Manuel, H. Kim, Unsupervised Machine Learning Combined with Cepstral Analysis of 4D-STEM Datasets for Characterizing Complex Microstructures of Precipitation-hardened Metallic Alloys, npj Computational Materials 10, 223 (2024)

G. Baucom, E. Hershkovitz, P. Chojecki, T. Nishida, R. Tabrizian, H. Kim, Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D-STEM and Automated Diffraction Indexing, Small Methods 8, 2400395 (2024) (2024)

Z. Zhang, E. HershkovitzG, Q.An, L. Liu, X. Wang, Z. Deng, G. Baucom, W. Wang, J. Zhao, Z. Xin, L. Moore, Y. Yao, M.R.U. Islam, X. Chen, B. Cui, L. Li, H. Xin, L. Li, H. Kim, and W. Cai, Spinel oxide enables high-temperature self-lubrication in superalloys, Nature Communications 15, 10039 (2024)

M.M.H. Tanim, S. Mondal, Y. Wu, D. Wang, G. Baucom, E. Hershkovitz, Y. Shen, H. Kim, T.B. Norris, and Z. Mi, Nitrogen-polar GaN quantum dots with tunable emission in the ultraviolet-A, B, and C bands, Applied Physics Letters 125, 204005 (2024) 

S. Mondal, E. Hershkovitz, G. Baucom, M.M.H. Tanim, S. Dabas, B. Chatterjee, H. Kim, R. Tabrizian, and Z. Mi, Polarity controlled ScAlN multi-layer transduction structures grown by molecular beam epitaxy, APL Materials 12, 111111 (2024)

A.H. Chen, Q. Lu, E. Hershkovitz, M.L. Crespillo, A.R. Mazza, T. Smith, T. Zac Ward, G. Eres, S. Gandhi, M.M. Mahfuz, V. Starchenko, K. Hattar, J.S. Lee, H. Kim, R.G. Moore, and M. Brahlek, Interfacially Enhanced Superconductivity in Fe(Te,Se)/Bi4Te3 Heterostructures”, Advanced Materials 36, 2401809 (2024) 

L. Keubler, E. Hershkovitz, D. Jouzminov, H.J. Gossmann, S. Charnvanichborikarn, C. Hatem, H. Kim, K.S. Jones, 4H to 3C polytypic transformation in Al+ implanted SiC during high temperature annealingElectronic Materials Letters 20, 345 (2024)

N.D. Arndt, E. Hershkovitz, L. Shah, K. Kjærnes, C.Y. Yang, P.P. Balakrishnan, M.S. Shariff, S. Tauro, D.B. Gopman, B.J. Kirby, A.J. Grutter, T. Tybell, H., and R.F. Need, Reduction-Induced Magnetic Behavior in LaFeO3−δ Thin Films, Materials 17, 1188 (2024) 

J.S. Li, H.H. Wan, C.C. Chiang, T. Yoo, M.H. Yu, F. Ren, H. Kim, Y.T. Liao, S.J. Pearton, Breakdown up to 13.5 kV in NiO/ß-Ga2O3 Vertical Heterojunction RectifiersECS Journal of Solid State Science and Technology (2024)

Y. Lee, E. Hershkovitz, H. Kim, K.N. Wertz, E.J. Payton, V.M. Miller, Prevalence of heteroepitaxial recrystallization in the low solvus high refractory (LSHR) γ-γ’ superalloyMetallography, Microstructure, and Analysis (2024)

P. Adhikari, A. Wijesinghe, A. Rathore, T. Yoo, G. Kim, S. Yeom, H.T. Lee, A. R. Mazza, C. Sohn, H.R. Park, M. Yoon, M. Brahlek, H. Kim, J.S. Lee, Structural anisotropy in Sb thin filmsAPL Materials, 12, 011116 (2024)

J. Chen, Z. Zhang, E. Hershkovitz, J. Poplawsky, R. Shekar, B. Dandu, C.Y. hung, W. Wang, Y. Yao, L. Li, H. Xin, H. Kim, W. Cai, Selective oxidation and nickel enrichment hinders the repassivation kinetics of multi-principal element alloy surfacesActa Materialia, 263, 119490 (2024)

2023

C.C. Chiang, H.H. Wan, J.S. Li, F. Ren, T. Yoo, Honggyu Kim, and S.J. Pearton, E-mode AlGaN/GaN HEMTs using p-NiO gates, Journal of Vacuum Science & Technology B 41, 062205 (2023)

J.S. Li, H.H. Wan, C.C. Chiang, T. Yoo, F. Ren, H. Kim, and S.J. Pearton, NiO/Ga2O3 Vertical Rectifiers of 7 kV and 1 mm2 with 5.5 A Forward Conduction Current, Crystals 13, 1624 (2023)

H.H. Wan, J.S. Li, C.C. Chiang, F. Ren, T. Yoo, H. Kim, A. Osinsky, F. Alema, S.J. Pearton, Vertical NiO/ß-Ga2O3 rectifiers grown by metalorganic chemical vapor depositionJournal of Vacuum Science & Technology A, 41 052707 (2023)

T. Tharpe, E. Hershkovitz, F. Hakim, H. Kim, R. Tabrizian, Nanoelectromechanical resonators for gigahertz frequency control based on hafnia-zirconia-alumina superlatticesNature Electronics, 6, 599 (2023)

J.S. Li, H.H. Wan, C.C. Chiang, X. Xia, T. Yoo, H. Kim, F. Ren, S.J. Pearton, Reproducible NiO/ß-Ga2O3 Vertical Rectifiers with Breakdown Voltage > 8 kVCrystals, 13, 886 (2023)

2022

X. Xia, J.S. Li, C.C. Chiang, T. Yoo, E. Hershkovitz, F. Ren, H. Kim, J. Kim, D.W. Jeon, J.H. Park, S.J. Pearton, Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600° CJournal of Vacuum Science & Technology A, 40, 063408 (2022)

T. Yoo, X. Xia, F. Ren, A. Jacobs, M.J. Tadjer, S.J. Pearton, and H.Kim, Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3Applied Physics Letters, 121, 072111 (2022)

J.S. Li, C.C. Chiang, X. Xia, T. Yoo, F. Ren, H. Kim, and S.J. Pearton, Demonstration of 4.7 kV Breakdown Voltage in NiO/β-Ga2O3 Vertical Rectifiers, Applied Physics Letters, 121, 042105 (2022)

X. Xia, J.S. Li, C.C. Chiang, T.J. Yoo, F. Ren, H. Kim, and S.J. Pearton, Annealing Temperature Dependence of Band Alignment of NiO/β-Ga2O3, Journal of Physics D: Applied Physics, 55, 385105 (2022)

2021

T.R Thapaliya, T. Yoo, S.H. Parra, M.D. Arndt, R.F. Need, J.M. Kikkawa, H. Kim, S.X. Huang, High-quality epitaxial thin films of topological kagome metal CoSn by magnetron sputtering, Applied Physics Letters, 119, 201902 (2021)

T.N. Pardue, M. Goyal, B. Guo, S.S. Rezaie, H. Kim, O. Heinonen, M.D. Johannes, S. Stemmer, Controlling the symmetry of cadmium arsenide films by epitaxial strain, APL Materials, 9, 051111 (2021)

J. Cheng, H. Yang, N.G. Combs, W. Wu, H. Kim, H. Chandrasekar, C. Wang, S. Rajan, S. Stemmer, W. Lu, Electron transport of perovskite BaSnO3 on (110) DyScO3 substrate with channel-recess for ferroelectric field-effect transistors, Applied Physics Letters, 118, 042105 (2021)

2019

H. Kim, M. Goyal, S.S. Rezaie, T. Schumann, T.N. Pardue, J.-M. Zuo, S. Stemmer, Point group symmetry of cadmium arsenide thin films determined by convergent beam electron diffraction, Physics Review Materials, 3, 084202 (2019)

S.S. Rezaie, H. Kim, K. Ahadi, S. Stemmer, Lattice relaxations around individual dopant atoms in SrTiO3, Physical Review Materials, 3, 114404 (2019)

M. Goyal, H. Kim, T. Schumann, L. Galletti, A.A. Burkov, S. Stemmer, Surface states of strained thin films of the Dirac semimetal Cd3As2, Physical Review Materials, 3 (6), 064204 (2019) 

D.A. Kealhofer, H. Kim, T. Schumann, M. Goyal, L. Galletti, S. Stemmer, Basal-plane growth of cadmium arsenide by molecular beam epitaxy, Physical Review Materials, 3 (3), 031201 (2019)

2018

H. Kim, Y. Meng, J.H. Kwon, J.L. Rouviére, J.M. Zuo, Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain, IUCrJ, 5 (1) (2018) 

H. Kim, Y. Meng, J.F. Klem, S.D. Hawkins, J.K. Kim, J.M. Zuo, Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb, Journal of Applied Physics, 123 (16), 161521 (2018)

K. Ahadi,  H. Kim, S. Stemmer, Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface, APL Materials, 6 (5), 056102 (2018)

P.B. Marshall, K. Ahadi,  H. Kim, S. Stemmer, Electron nematic fluid in a strained Sr3Ru2O7 film, Physical Review B, 97, 155160 (2018) 

L. Galletti, T. Schumann, O.F. Shoron, M. Goyal, D.A. Kealhofer, H. Kim, S. Stemmer, Two-dimensional Dirac fermions in thin films of Cd3As2, Physical Review B, 97, 115132 (2018)

T. Schumann, L. Galletti, D.A. Kealhofer, H. Kim, M. Goyal, S. Stemmer, Observation of the quantum Hall effect in confined films of the three-dimensional Dirac semimetal Cd3As2, Physical Review Letters, 120, 016801 (2018) 

2017

H. Kim, P.B. Marshall, K. Ahadi, T.E. Mates, E. Mikheev, S. Stemmer, Response of the lattice across the filling-controlled Mott metal-insulator transition of a rare earth titanate, Physics Review Letters, 119 (18), 186803 (2017) 

H. Kim, Y. Meng, J.L. Rouviére, J.M. Zuo, Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice, Micron, 92, 6-12 (2017) 

P.B. Marshall, H. Kim, S. Stemmer, Disorder versus two transport lifetimes in a strongly correlated electron liquid, Scientific Reports, 7 (1), 10312 (2017) 

P.B. Marshall, H. Kim, K. Ahadi, S. Stemmer, Growth of strontium ruthenate films by hybrid molecular beam epitaxy, APL Materials, 5 (9), 096101 (2017) 

2016

H. Kim, J.Y. Zhang, S. Raghavan, S. Stemmer, Direct observation of Sr vacancies in SrTiO3 by quantitative scanning transmission electron microscopy, Physical Review X, 6 (4), 041063 (2016) 

T. Schumann, M. Goyal, H. Kim, S. Stemmer, Molecular beam epitaxy of Cd3As2 on a III-V substrate, APL Materials, 4 (12), 126110 (2016) 

T. Schumann, S. Raghavan, K. Ahadi, H. Kim, S. Stemmer, Structure and optical band gaps of (Ba, Sr)SnO3 films grown by molecular beam epitaxy, Journal of Vacuum Science & Technology A, 34 (5), 050601 (2016) 

S. Raghavan, T. Schumann, H. Kim, J.Y. Zhang, T.A. Cain, S. Stemmer, High-mobility BaSnO3 grown by oxide molecular beam epitaxy, APL Materials, 4 (1), 016106 (2016) 

J.Y. Zhang, H. Kim, E. Mikheev, A.J. Hauser, S. Stemmer, Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films, Scientific Reports, 6, 23652 (2016) 

2015

Q. Zheng, H. Kim, R. Zhang, M. Sardela, J.M. Zuo, M. Balaji, S. Lourdudoss, Y.T. Sun, P.V. Braun, Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy, Journal of Applied Physics, 118 (22), 224303 (2015) 

2014

J.M. Zuo, A.B. Shah, H. Kim, Y. Meng, W. Gao, J.L. Rouviére, Lattice and strain analysis of atomic resolution Z-contrast images based on template matching, Ultramicroscopy, 136, 50-60 (2014) 

J. Cho, M.D. Losego, H.G. Zhang, H. Kim, J.M. Zuo, I. Petrov, D.G. Cahill, P.V. Braun, Electrochemically tunable thermal conductivity of lithium cobalt oxide, Nature Communications, 5, 4035 (2014)

Y. Meng, H. Kim, J.L. Rouviére, D. Isheim, D.N. Seidman, J.M. Zuo, Digital model for X-ray diffraction with application to composition and strain determination in strained InAs/GaSb superlattices, Journal of Applied Physics, 116 (1), 013513 (2014) 

R. Liu, Y. Zhong, L. Yu, H. Kim, S. Law, J.M. Zuo, D. Wasserman, Mid-infrared emission from In(Ga)Sb layers on InAs(Sb), Optics Express, 22 (20), 24466-24477 (2014)

2013

H. Kim, Y. Meng, J.L. Rouviére, D. Isheim, D.N. Seidman, J.M. Zuo, Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study, Journal of Applied Physics, 113 (10), 103511 (2013)